ZrW2O8/E-51电子封装材料电学性能研究

采用具有负热膨胀特性的ZrW2O8粉体和SiO2粉体分别作为填料制备E—51环氧树脂电子封装材料。测试了填料对封装材料的相对介电常数、介质损耗、阻温特性和电击穿场强等电性能的影响。结果表明:在相同含量下,ZrW2O8填料效果好;随ZrW2O8量的增加,介质损耗不断减小,ZrW2O8与E—51的质量比为0.7∶1时,相对介电常数最大;在室温~163℃范围内,ZrW2O8/E—51的电阻率稳定在3.03×106?.m,电击穿场强均大于10 kV/m。

Study on electrical properties of ZrW2O8/ E-51 electronic casting composite materials

The high-pure ZrW2O8 powders,with negative thermal expansion characteristic,were prepared by chemical solid phase step method.The preparation of epoxy resin electronic casting using different contents of ZrW2O8 and SiO2 as fillers was studied.The dielectric constant,dielectric loss,bulk resistivity and breakdown field strength of the composite materials were measured.The results show that with increase of ZrW2O8 content,the dielectric loss declines gradually,when the mass radio of ZrW2O8 and E—51 is 0.7 ∶1,the dielectric constant of ZrW2O8/E—51 is the best.At room temperature and 163 ℃,ZrW2O8/ E—51 composite materials reveal a steady bulk resistivity about 3.03×106 ?.m,and its breakdown field strength is in excess of 10 kV/m.