| 衬底温度对反应溅射TiN_x薄膜结构与电阻率的影响 |
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| 引用本文： | 安玉凯. 衬底温度对反应溅射TiN_x薄膜结构与电阻率的影响[J]. 光电子．激光, 2010, 0(2): 213-216 |
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| 作者姓名： | 安玉凯 |
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| 作者单位： | 天津理工大学天津市光电显示材料与器件重点实验室教育部光电材料与显示器件重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目(60476003) |
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| 摘 要： | 采用反应磁控溅射方法,在不同Si(100)衬底温度下,制备出了TiNx薄膜。通过X射线衍射(XRD)、扫描电子显微镜(SEM)对TiNx薄膜的物相、微观结构进行了表征,采用电子能谱仪(EDS)测定了TiNx薄膜的成分,运用四探针测试仪测量了TiNx薄膜的电阻率,研究了衬底温度对溅射TiNx薄膜结构与电阻率的影响。研究结果表明:衬底温度从室温升高到600℃时,随着温度升高,TiNx薄膜的(111)晶面衍射峰逐渐增强,500℃后减弱;(200)晶面衍射峰在300℃时最强,之后减弱。随着衬底温度的升高,TiNx薄膜的晶粒逐渐增大,300℃达最大后减小。随着衬底温度升高,TiNx薄膜的N/Ti原子含量比降低,200℃时降到最低为0.99,随后升高,500℃时最高为1.34,随后再次降低。N/Ti原子含量比与薄膜电阻率呈明显反比变化。
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| 关 键 词： | TiNx薄膜 反应磁控溅射 N/Ti原子含量比 电阻率 |
The effect of substrate temperature on the structure and resistivity of TiN_x films prepared by reactive magnetron sputtering |
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| AN Yu-kai. The effect of substrate temperature on the structure and resistivity of TiN_x films prepared by reactive magnetron sputtering[J]. Journal of Optoelectronics·laser, 2010, 0(2): 213-216 |
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| Authors: | AN Yu-kai |
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| Affiliation: | Tianjin Key Laboratory for Photoelectric Materials and Devices;Key Laboratory of Display Materials and Photoelectric Devices;EMC;Tianjin University of Technology;Tianjin 300191;China |
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| Abstract: | TiNx films are deposited by reactive magnetron sputtering on Si substrate(100) at different substrate temperature.The crystallization,microstructure and composition of the films are characterized by X-ray diffraction(XRD),scanning electronic microscope(SEM) and energy dispersive spectrometer(EDS).The resistivity of TiNx films is measured by a four-probe instrument.The relation of the substrate temperature with the structure and resistivity of TiNx films is investigated.The results show that the diffraction ... |
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| Keywords: | TiNx films reactive magnetron sputtering N/Ti atom ratio resistivity |
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