3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer |
| |
Authors: | Asim Kepkep Umberto Ravaioli |
| |
Affiliation: | (1) Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA |
| |
Abstract: | A full band, three-dimensional, Monte Carlo simulator for deep sub-micron Si MOSFET like devices has been developed, with the goal to obtain optimal performance on a parallel system built from a cluster of commodity computers. A short-range carrier-carrier and carrier-ion model has been implemented within this framework, using Particle-Particle Particle-Mesh (P3M) algorithm. Test simulations include the 90 nm well-tempered MOSFET for which measurements are available. Simulation benchmarks have identified several factors limiting the overall performance of the code and suggestions for improvements in these areas are made. |
| |
Keywords: | Monte Carlo methods MOSFET parallelization |
本文献已被 SpringerLink 等数据库收录! |
|