Modulation of Agglomeration of Vertical Porous Silicon Nanowires and the Effect on Gas‐Sensing Response

Porous silicon nanowires (PSiNWs) array is a promising material for development of integrated gas sensors operating at room temperature. This work reports the fabrication of PSiNWs assembly with different structural features and its effect on gas‐sensing performance. Bundling and well separating PSiNWs arrays are fabricated by MACE method, respectively, based on the effective modulation of surface wettability of the initial Si substrate. The HF pretreatment creates a hydrophobic surface favorable for deposition of irregular Ag nanoflakes and then for the formation of bundling PSiNWs array. In contrast, the PSiNWs with well lateral separation are formed based on the predeposited uniform Ag nanoparticles on a hydrophilic Si surface. The PSiNWs array featured by tip‐clusters is proved to be highly effective in achieving highly sensitive and rapid response to NO₂ gas at room temperature. Satisfying dynamic characteristic and selectivity are meanwhile observed for the bundling array. The formation of the bundling or separating of PSiNWs is discussed in terms of the force balance of individual nanowire, which is further correlated with non‐uniform distribution of Ag nanoclusters caused by H‐termination. Meanwhile, high sensing performance of bundling nanowires is analyzed based on the structural promotion of the unique configuration of tip‐cluster to sensing response.