| 铁电PLZT薄膜退火工艺的研究 |
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| 引用本文： | 胡用时,卢德新.铁电PLZT薄膜退火工艺的研究[J].压电与声光,1994,16(6):35-38. |
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| 作者姓名： | 胡用时 卢德新 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 在无氧气氛下，采用射频磁控溅射法制备了ＰＬｚＴ系列薄膜，对原位溅射薄膜进行了快速退火及常规退火处理，深入研究了退火工艺对铁电薄膜结构与性能的影响。认为采用常规退火工艺处理无氧溅射的薄膜时，铁电薄膜具有更好的晶体结构和铁电性能。
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| 关 键 词： | 铁电薄膜，退火工艺，性能 |
Study on Annealing Technique of Ferroelectric PLzT Series Thin Films |
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| Hu Yongshi, Lu Dexin, Li Zuoyi.Study on Annealing Technique of Ferroelectric PLzT Series Thin Films[J].Piezoelectrics & Acoustooptics,1994,16(6):35-38. |
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| Authors: | Hu Yongshi Lu Dexin Li Zuoyi |
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| Affiliation: | Department of Solid State Electronics.Huazhong Univerity of Science and Technology.430074.Wuhan |
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| Abstract: | Tbe ferroelectric PLZT thin films were prepared by rf magnetron sputtering without oxygenambient.the as-deposited films were processed with rapid thermal annealin(RTA)and conventional furnaceannealing(CFA) .and then the cffect of annealing on structure and properties of the ferroelectric films wasstudied,The results show that the ferroelectric films had better crystal structure and ferroelectric proportieswhen the films were annealed using CFA. |
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| Keywords: | ferroelectric thin film annealing property |
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