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VDMOS功率器件开关特性研究
引用本文:邵建新 王立模. VDMOS功率器件开关特性研究[J]. 微电子学, 1994, 24(2): 17-21
作者姓名:邵建新 王立模
作者单位:中国华晶电子集团公司中央研究所
摘    要:本文详细分析了线性负载VDMOS功率器件的开关特性,得到了开关时间与栅输入电容及器件跨导、测试(工作)电流及电压的关系,并以方形原胞为例,指出了在设计和工艺上提高开关速度的途径。

关 键 词:功率器件 开关特性 半导体器件

An Investigation Into the Switching Characteristics of VOMOS Power Dovices
Shao Jianxin, Wang Limo. An Investigation Into the Switching Characteristics of VOMOS Power Dovices[J]. Microelectronics, 1994, 24(2): 17-21
Authors:Shao Jianxin   Wang Limo
Abstract:detailed analysis is made on the switching characteristics of VDMOS power devices with linear Ioad.Theswitching time has been correlated to gate input capacitance/device transeonductance ahd test( Operating )voltage/cur-rent.With square cell as an example. approaches to improving switching time in design and process are presented.
Keywords:VDMOS  Power device. Switching characteristics  
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