| SOIMOS器件的低温特性 |
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| 引用本文： | 魏同立.SOIMOS器件的低温特性[J].微电子学,1994,24(3):13-18. |
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| 作者姓名： | 魏同立 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 本文概述性地探讨了低温ＳＯＩＭＯＳ器件的基本特性，如电流－电压特性、迁移率、阈值电压及亚阈值特性等，并介绍了该器件中所存在的一些效应。
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| 关 键 词： | MOS 低温器件 低温 特性 |
Low-Temperature Characteristics of SOI MOS Devices |
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| Li Yao and Wei Tongli.Low-Temperature Characteristics of SOI MOS Devices[J].Microelectronics,1994,24(3):13-18. |
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| Authors: | Li Yao and Wei Tongli |
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| Abstract: | A comperhensive dicussion is made on the basic characteristics of SOI MOS devices at low temperatures,such as current-voltage characteristics, mobilities,threshold voltages and subthrshold characteristics.Also presented in thepaper are some of the effects existing in the device. |
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| Keywords: | SOI MOS Low-temperature device |
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