Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface |
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Authors: | Mikoushkin V M |
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Affiliation: | (1) Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada, L8S 4K1;; |
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Abstract: | The composition of a nitride nanolayer formed on a GaAs(100) surface by the implantation of ions with an energy of E
i = 2.5 keV and the chemical state of nitrogen in this layer have been studied by the method of Auger electron spectroscopy.
It is established that, in addition to GaN, a GaAsN solid solution phase is formed in the ion-implanted layer. The energies
of N KVV Auger electron transitions in these phases are determined as E
A
(GaN) = 379.8 ± 0.2 eV and E
A
(GaAsN) = 382.8 ± 0.2 eV (relative to the Fermi level), which allowed the distribution of nitrogen between these phases to
be evaluated as N(GaN)] = 70% and N(GaAsN)] = 30%. It is established that an argon ion beam produces a chemical effect on
the nitride layer, which is related to a cascade mixing of the material. Under the action of the argon ion bombardment, the
distribution of nitrogen in the indicated phases changes to opposite. As a result a nitride nanolayer is formed in which the
narrow-bandgap semiconductor (GaAsN) predominates rather than the wide-bandgap component (GaN). |
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