Observation of deep levels associated with dislocations in n-type Hg0.3Cd0.7Te

Deep level transient spectroscopy (DLTS) has been used to study the traps associated with dislocations in n-type Hg_0.3Cd_0.7Te. Dislocations have been generated by ion implantation at high fluence. Two of the broadened lines (E1=E_c–0.22eV and E1=E_c–0.34eV), we have observed, show a logarithmic dependence with the filling pulse. They are characteristic of point defect clouds surrounding or generated by the dislocations. An unusual broadened line (E2=E_c–0.27eV) has also been observed, its amplitude decreases for filling pulses longer than 50 s. This can be explained by a configuration change of the defect leading to the appearance of a new DLTS line. In addition, an electron trap (EP4=E_c–0.22eV), which seems to behave like an isolated point defect, has also been found.