| Photoluminescence from neodymium silicide thin films formed by MEVVA ion source |
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| 作者姓名： | XIAOZhi－Song XUFei |
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| 作者单位： | [1]KeyLaboratoryinUniversityforRadiationBeamTechnologyandMaterialsModification,InstituteofLowEnergyNuclearPhysics,BeijingNormalUniversity;BeijingRadiationCenter,Beijing100875 [2]Departm,InstituteofLowEnergyNuclearPhysics,BeijingNormalUniversity;BeijingRadiationCenter,Beijing100875 |
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| 基金项目： | National Natural Science Foundation (No. 59671051) |
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| 摘 要： | Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vapor vacuum are(MEVVA)ion source.The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state,but there was only single neodymium silicide compound in the post-annealed state,and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature.The blue-violet luminescence excited by ultra-viloet was observed at the room temperature(RT),and the intensity of photoluminescence(PL)increased with increasing the neodymium ion fluence,Moreover,the photoluminescence was closely dependent on the temperature of rapid thermal annealing(RTA),A mechanism of photoluminescence was discussed.
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| 关 键 词： | MEVVA离子源 离子移殖 薄膜 光致发光 |
Photoluminescence from neodymium silicide thin films formed by MEVVA ion source |
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| XIAO Zhi-Song,XU Fei,CHENG Guo-an,ZHANGTong-He,YI Zhong-zhen,WANG Shui-Feng.Photoluminescence from neodymium silicide thin films formed by MEVVA ion source[J].Nuclear Science and Techniques,2001,12(1):21-23. |
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| Authors: | XIAO Zhi-Song XU Fei CHENG Guo-an ZHANGTong-He YI Zhong-zhen WANG Shui-Feng |
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| Abstract: | Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the postannealed state, and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed. |
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| Keywords: | Photoluminescence Neodymium silicide Ion implantation MEVVA ion source Rapid thermal annealing (RTA) |
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