Formation of crystalline aluminum silicate hydroxide layer during deposition of amorphous alumina coatings by electron beam evaporation |
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| Affiliation: | 1. P. N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskiy Prospekt, 119991 Moscow, Russia;2. F. V. Lukin Research Institute of Physical Problems, 4806, Zelenograd, Moscow 124460, Russia;3. A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str, 119991 Moscow, Russia;4. National Research Nuclear University MEPhI, 31 Kashirskoe shosse, 115409 Moscow, Russia;5. V. I. Vernadsky Institute of Geochemistry and Analytical Chemistry,, , Russian Academy of Sciences, 19 Kosygin Str, Moscow 119991, Russia;6. ITMO University, Mechanics and Optics, 49 Kronverkskiy Pr., St. Petersburg 197101, Russia;1. Department of Studies in Chemistry, University of Mysore, Manasagangotri, Mysore 570 006, Karnataka, India;2. Department of Chemistry, Sri Venkateswara College, Dhula Kuan, New Delhi 110021, India |
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| Abstract: | Aluminum oxide films were deposited on fused silica and borosilicate glass substrates by electron beam evaporation, without any substrate heating. Grazing incidence X-ray diffraction measurements found that a layer of crystalline aluminum silicate hydroxide was formed at the interface of the substrate and the amorphous alumina film, the latter transformed to γ-alumina phase on heat treatment at 800 °C. The aluminum silicate hydroxide layer was produced by the chemical reaction between condensing Al and Al–O species, OH− from the residual water vapors in the chamber and Si atoms from the underlying silica and borosilicate glass substrates. |
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