Plasma oxidation of thermally grown graphenes and their characterization |
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| Affiliation: | 1. Weisberg Division of Computer Science, Marshall University, Huntington, WV 25755, United States;2. 2;3. Department of Computer Science and Engineering, Incheon National University, Incheon 22012, South Korea;1. EE department, College of Engineering, Qatar University, Qatar;2. EE department, University of Texas at Dallas, USA;3. New York University of Abu Dhabi, UAE;4. LE2i Lab, University of Burgundy Dijon, France |
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| Abstract: | We report the plasma oxidation of thermally synthesized graphenes and their characterization using Raman spectroscopy and atomic force microscope (AFM). A graphene was synthesized by thermal chemical vapor deposition with methane and transferred onto trench substrate to make suspended configuration in order to exclude substrate effects. The air plasma treatment at 0.4 W for 5 min and property characterization were alternately performed to address the effect of oxidation. After the oxidation, a drastic change in Raman spectra was observed, which implies that considerable structural changes occurred in the graphene. Interestingly, we observed from the Raman and AFM analyses that the number of layers can be reduced by the controlled plasma oxidation treatment. The results may open the possibility of graphene formation from graphite sheets through the precise control of plasma treatment conditions. |
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