Thermal stability and electrical properties of Ag–Ti films and Ti/Ag/Ti films prepared by sputtering |
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| Affiliation: | 1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;2. Science and Technology on High Strength Structural Materials Laboratory, Changsha 410083, China;3. University of Chinese Academy of Sciences, Beijing 100049, China;1. Departamento de Ingeniería de Proyectos, Universidad de Guadalajara, José Guadalupe Zuno 48, Zapopan, Jalisco 45100, Mexico;2. Unidad Académica de Ingeniería I, Universidad Autónoma de Zacatecas, Av. López Velarde 801, Zacatecas, Zacatecas 98060, Mexico;3. Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica Ciudad Universitaria S/N, D.F. 04510, Mexico;4. Centro de Investigación y Estudios Avanzados del I.P.N., Libramiento Norponiente 2000, Querétaro, Querétaro 76230, Mexico;1. Surface Technology Division, Korea Institute of Materials Science, Changwon, Gyeongnam 51508, Republic of Korea;2. School of Advanced Materials Engineering, Dong-Eui University, Busan 47340, Republic of Korea;3. Daegu Center, Korea Basic Science Institute, Daegu 41566, Republic of Korea;4. Jeonju Center, Korea Basic Science Institute, Jeonju 54907, Republic of Korea;5. Busan Center, Korea Basic Science Institute, Busan 46742, Republic of Korea |
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| Abstract: | Ag–Ti (100 nm) alloy film, and Ti/Ag (100 nm) double-layer and Ti/Ag (100 nm)/Ti triple-layer films were prepared by rf sputtering to investigate the effect of Ti on suppression of agglomeration of the Ag thin film caused by thermal treatment. Scanning electron microscopy revealed that the Ag–Ti and Ti/Ag/Ti films had high thermal stability. X-ray photoelectron spectroscopy analysis showed that the surfaces of both kinds of films were covered with a TiO2 layer after annealing, which was considered to be the key factor for improvement of the thermal stability of the films. In addition, scratch tests indicated improvement of the adhesive strength of the Ti/Ag/Ti film to the SiO2 substrate due to the underlying Ti film layer, which effectively promoted suppression of Ag agglomeration. However, the resistivity of the Ag–Ti films increased abruptly with increasing Ti content due to the impurity scattering effect, and minimum usage of the alloying element was required to achieve low resistivity. In contrast, the Ti/Ag/Ti film exhibited both low resistivity and high thermal stability. |
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