One-step growth of curled GaN nanowires using chemical vapor deposition method |
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| Affiliation: | 1. School of Engineering and Mathematical Sciences, City, University of London, UK;2. Department of Electrical Engineering, Frederick University, Nicosia, Cyprus;1. Sorbonne Universites, University of Technology of Compiegne, France;2. IRISA, Université de Rennes, France;3. UFC/FEMTO-ST, UMR CNRS 6174, 1 cours Leprince-Ringuet, 25201 Montbeliard, France;1. Department of Computer Science and Engineering, University of Dhaka, Bangladesh;2. College of Computer and Information Sciences, King Saud University, Riyadh, Saudi Arabia |
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| Abstract: | The studies of curled GaN nanowires grown on sapphire and silicon substrate using chemical vapor deposition method have been reported in this article. The mean diameters of the nanowires grown on sapphire and silicon were 108.1 nm and 98 nm respectively. A growth model was proposed to describe the growth of nanowires. X-ray diffraction pattern and Raman spectroscopy revealed that the nanowires were hexagonal wurtzite in structure. Gaussian fitting was done on photoluminescence spectra, which revealed two sub-bands that could be attributed to band emission and surface disorder caused by impurities. The absence of yellow luminescence signified undoped case and minimal shallow level defects. |
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