Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells |
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| Affiliation: | 1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang 11800, Malaysia;2. Energy Materials Laboratory, Physics Department, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835, Egypt;3. Electrochemistry Laboratory, Physical Chemistry Department, National Research Center, Dokki, Cairo 12622, Egypt;1. Kyoto University, 2, Asashiro-Nishi, Kumatori-cho, Sennan-gun, Osaka 590-0494, Japan;2. National Institute of Radiological Sciences, 4-9-1, Anagawa, Inage-ku, Chiba 263-8555, Japan;1. Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Malaysia;2. Materials Department, University of California, Santa Barbara, CA, 93206, USA;3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA;4. Synchrotron Light Research Institute, Nakhon Ratchasima, 30000, Thailand;1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, China;2. Guangdong Institute of Semiconductor Industrial Technology, Guangzhou, 510651, China;3. Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, N.T, Hong Kong, China;1. Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan;1. Faculty of Basic Sciences, Tra Vinh University, Tra Vinh, Viet Nam;2. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;1. Department Electronics and Computer Engineering Technology, Indiana State University, Terre Haute, IN 47809, USA;2. Department of Math and Physics, Morehead State University, Morehead, KY 40351, USA;3. Division of Energy Technology, Daegu Gyeongbuk Institute of Science & Technology, Daegu 42988, Republic of Korea |
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| Abstract: | We report the fabrication of heterojunction solar cells via the thermal chemical vapor deposition (CVD) of gallium nitride (GaN) nanostructures on clean Si substrates. GaN epitaxial layers were synthesized via the direct reaction of Ga vapor and NH3 solution at 1050 °C. The structural and optical characteristics of the as-grown GaN layers were investigated. The effects of Si orientation (100 vs 111) and doping type (n- vs p-) on the structural and optical properties of the deposited GaN nanostructures and solar cell performance were explored. The fabricated GaN nanostructures exhibited p-type behavior at the GaN/Si interface as revealed from the Hall-effect measurements. The J–V characteristics showed rectifying behavior for the GaN/n-Si junction and Ohmic behavior for the GaN/p-Si junction. Upon illumination (30 mW/cm2), the as-deposited heterojunction solar cell devices showed conversion efficiencies of 6.18% and 3.69% for GaN/n-Si (1 1 1) and GaN/n-Si (1 0 0) heterojunctions, respectively. The growth of GaN on Si substrates in the presence of NH3 solution has strong effect on the morphological, optical and electrical properties and consequently on the efficiency of the solar cell devices made of such substrates. |
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| Keywords: | GaN Si Heterostructure Chemical vapor deposition Solar cell Hall measurement |
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