| 基于双层电化学结构的微型安培免疫传感器 |
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| 引用本文： | 边超,许媛媛,孙红光,陈绍凤,夏善红.基于双层电化学结构的微型安培免疫传感器[J].仪表技术与传感器,2006(1):1-3. |
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| 作者姓名： | 边超 许媛媛 孙红光 陈绍凤 夏善红 |
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| 作者单位： | 1. 中国科学院电子学研究所传感技术联合国家重点实验室北方基地,北京,100080;中国科学院研究生院,北京,100039
2. 中国科学院电子学研究所传感技术联合国家重点实验室北方基地,北京,100080 |
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| 摘 要： | 文中利用MEMS工艺在硅基底上制备铂微电极芯片,并采用双层电化学结构进行抗体的固定,用于人免疫球蛋白IgG的安培酶免疫检测.第一层为聚吡咯过渡层,第二层为抗体与聚邻苯二胺的共聚层.该传感器工作电压-0.3 V,检测下限5 ng/mL,线性范围5～355 ng/mL,响应时间3～5 min,具有制备简便、响应快、下限低、试剂用量少、微型化、便于集成等优点.
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| 关 键 词： | 安培酶免疫传感器 电化学聚合 聚吡咯 聚邻苯二胺 |
| 文章编号： | 1002-1841（2006）01-0001-03 |
| 收稿时间： | 2005-03-16 |
| 修稿时间： | 2005-09-30 |
Micro Amperometric Immunosensor Based on Electrochemical Measurement for Immobilizing Antibody |
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| BIAN Chao,XU Yuan-yuan,SUN Hong-guang,CHEN Shao-feng,XIA Shan-hong.Micro Amperometric Immunosensor Based on Electrochemical Measurement for Immobilizing Antibody[J].Instrument Technique and Sensor,2006(1):1-3. |
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| Authors: | BIAN Chao XU Yuan-yuan SUN Hong-guang CHEN Shao-feng XIA Shan-hong |
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| Affiliation: | 1. State Key Lab of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100080, China; 2.The Graduate School of Chinese Academy of Scieaces, Beijing 100039,China |
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| Abstract: | A micro Pt amperometric immunosensor on silicon wafer based on MEMS was fabricated to detect human IgG.Antibodywas immobilized usingtwo-layer polymers.Firstly polypyrrole was electropolymerized onthe electrode asthetransitionlayer.Then anti-body and poly o-phenylenediaminewas electropolymerized.Withthe working potential of-0.3 V,the immunosensor displayed a goodlinear dose response behaviorfor humanIgGconcentrations between5 and 355 ng/mL.Alowdetectionlimit of 5ng/mLandresponsetimeof 3 ~5 minute were achieved.This micro amperometric immunosensor has many advantages suchas easyfabrication,fast responsetime,lowdetectionlimit,little reagent,micro bulk and easyintegration withIC. |
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| Keywords: | IgG |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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