SiC高温高量程MEMS加速度传感器的仿真与分析

加速度传感器材料的特性对传感器的性能影响很大,SiC作为新一代半导体材料具有优良的力学温度特性,适用于高温、高过载加速度传感器.基于SiC提出了一种可用于高温、高过载环境的加速度传感器设计方案.根据悬臂梁的相关力学理论知识,对传感器结构、尺寸进行了设计,并利用ANSYS有限元仿真软件对SiC材料传感器敏感结构进行模态分析、静力学分析、热分析.仿真结果表明,6H-SiC材料表现出了比Si材料更优异的抗高温、抗过载特性,为应用于高量程、高温环境下的加速度传感器研究提供了可靠的理论基础.

Theory and simulation analysis research of high-g and high-temperature MEMS accelerometer based on SiC

Properties of material greatly influence the performance parameters of accelerators. As a new type of semiconductor materials,SiC has excellent mechanical properties and temperature characteristic,being applicable to high-temperature and high-g accelerator. This paper put forward a design scheme for high-temperature and high-g accelerator based on SiC. The structure and size of accelerator were designed by referring to mechanics theory knowledge of cantilever beam,and characteristics of sensitive structure were analyzed by Modal analysis,statics analysis and thermal analysis on ANSYS. Simulation results show that SiC performs better than Si in high temperature and high overload conditions,which provides reliable theory basis for the research of high-temperature and high-g accelerometer.