MBE-grown Si/SiGe HBTs with high β, fT,and fmax |
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Authors: | Gruhle A Kibbel H Konig U Erben U Kasper E |
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Affiliation: | Daimler-Benz Res. Center, Ulm; |
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Abstract: | Si/SiGe heterojunction bipolar transistors (HBTs) were fabricated by growing the complete layer structure with molecular beam epitaxy (MBE). The typical base doping of 2×1019 cm-3 largely exceeded the emitter impurity level and led to sheet resistances of about 1 kΩ/□. The devices exhibited a 500-V Early voltage and a maximum room-temperature current gain of 550, rising to 13000 at 77 K. Devices built on buried-layer substrates had an fmax of 40 GHz. The transit frequency reached 42 GHz |
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