Excellent low-pressure-oxidized Si3N4 filmson roughened poly-Si for high-density DRAMs |
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Authors: | Han-Wen Liu Huang-Chung Cheng |
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Affiliation: | Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/μm2 has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. These novel electrodes are fabricated by H 3PO4-etching and are RCA-cleaned. The leakage current density at +2.5 and -2.5 V are 0.07×10-9 and -2.4×10-8 A/cm2, respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectric-breakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications |
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