半导体光电特性的表面光电压谱表征 |
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引用本文: | 王华英,朱海丰,何杰,李丽宏.半导体光电特性的表面光电压谱表征[J].河北工程大学学报,2004,21(2):90-93. |
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作者姓名: | 王华英 朱海丰 何杰 李丽宏 |
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作者单位: | 河北工程学院,数理系,河北,邯郸,056038;河北大学,河北,保定,071002 |
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基金项目: | 河北省自然科学基金 ( 5 0 0 0 84) |
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摘 要: | 根据半导体能带结构 ,利用静电平衡条件及电荷守衡定律 ,详细讨论了半导体表面光电压的产生原理、测量方法 ,给出了单晶硅的表面光电压谱 ,并由此得出了单晶硅的带隙能量
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关 键 词: | 半导体 表面光电压 表面光电压谱 单晶硅 |
文章编号: | 1007-6743(2004)02-0090-04 |
修稿时间: | 2003年11月11 |
Characterization of photoelectric properties of semiconductor by surface photovotage spectroscopy |
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Authors: | WANG Hua-ying ZHU Hai-feng HE Jie LI Li-hong |
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Affiliation: | WANG Hua-ying~1,ZHU Hai-feng~2,HE Jie~2,LI Li-hong~1 |
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Abstract: | The principle of the SPS method and the measuring technique are discussed particularly using the electrostatic equilibrium condition and the law of conservation of charge on the basis of the energy band structure of semiconductor. The surface photovoltage spectroscopy of p-type monocrystal silicon is given, from which the energy of the material's bandgap is determined. |
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Keywords: | semiconductor surface photovoltage surface photovoltage spectroscopy monocrystal silicon |
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