基于GaN器件的高速直流无刷电机驱动器

传统直流无刷电机(BLDCM)驱动器以硅晶体管作为功率器件,工作频率低、开关损耗大,不适用于高速应用场合。宽禁带半导体氮化镓(GaN)晶体管,具有开关速度快、导通电阻小等优势,是高速驱动器的理想选择之一。基于GaN器件,设计了一款20 000 r/min转速的高速BLDCM驱动器。首先介绍了BLDCM驱动的工作原理,然后分析了GaN器件晶体管栅极驱动电阻值的计算过程,选取Si8273作为GaN晶体管GS61008P的驱动芯片,利用霍尔信号配合数字控制器软件得到换相脉冲,以完成高速驱动器的软硬件设计。验结果表明,GaN方案显著减小了驱动器体积,提高了响应速度。

High-Speed Brushless DC Motor Driver Based on GaN Devices

Traditional brushless DC motor(BLDCM) drivers which utilize silicon devices, due to the low working frequency and high switch loss, cannot fulfill high-speed applications. Wide-band-gap GaN devices with low turn-on resistance and high switch frequency are the optimum choice for high-speed drivers. A BLDCM driver based on GaN devices is designed. The motor rotation speed of 20 000 r/min is achieved. The BLDCM driver theory is introduced. The GaN devices′ gate-drive resistance is calculated. Choosing gate-drive chip Si8273 to drive GS61008 P and using Hall signal to obtain commutation time, the design of high-speed driver is completed. Experiment results show that GaN devices improve the controller′s response significantly and the size of the controller is also comparatively smaller.