Improved Statistical Interconnect Timing Analysis Considering Scattering Effect

考虑纳米尺度互连线的散射效应,提出了一种改进的时序分析方法.首先,考虑互连线宽度和厚度的影响,提出了一个简单的散射效应的解析模型.然后,利用这个模型和SS2M得到了过渡时间的统计表达式.实验结果表明,当考虑散射效应后,互连线的延时和过渡时间将进一步增加.同时,提出的统计SS2M模型与SPICE蒙特卡罗分析结果比较,均值的平均误差在4.16%以内,而方差的平均误差在3.06%以内.

Improved Statistical Interconnect Timing Analysis Considering Scattering Effect

We propose an improved statistical approach for modeling interconnect slew that takes into account the scattering effect of a nanoscale wire.We first propose a simple,closed-form scattering effect resistivity model,considering the effects of both width and thickness.Then we use this model to derive statistical expressions of the slew metrics using the SS2M model.We find that the delay and slew can be greatly increased when considering the scattering effect.The proposed statistical SS2M model has an average error of 4.16% with respect to SPICE Monte Carlo simulations,with an average error of standard deviation of only 3.06%.