Highly reliable, high-C DRAM storage capacitors with CVD TA2O5 films on rugged polysilicon |
| |
| Authors: | Lo GQ Kwong D-L Fazan PC Mathews VK Sandler N |
| |
| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
| |
| Abstract: | The authors report on a highly reliable stacked storage capacitor with ultrahigh capacitance using rapid-thermal-annealed low-pressure chemical vapor deposited (LPCVD) Ta2O5 films (~100 Å) deposited on NH3-nitrided rugged poly-Si electrodes. Capacitances as high as 20.4 fF/μ2 (corresponding to the thinnest tox.eff (16.9 Å) ever reported using LPCVD-Ta2O5 and poly-Si technologies) have been achieved with excellent leakage current and time-dependent dielectric breakdown (TDDB) characteristics. Extensive electrical characterization over a wide temperature range (~25-300°C) shows that Ta2O 5 films on rugged poly-Si electrodes have a better temperature stability in dielectric leakage and breakdown compared to the films on smooth poly-Si electrodes |
| |
| Keywords: | |
|
|
