| SRAM型FPGA器件总剂量辐射损伤效应的研究 |
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| 引用本文： | 高博,余学峰,任迪远,李豫东,孙静,崔江维,王义元,李明.SRAM型FPGA器件总剂量辐射损伤效应的研究[J].半导体学报,2012,33(3):034007-6. |
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| 作者姓名： | 高博 余学峰 任迪远 李豫东 孙静 崔江维 王义元 李明 |
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| 作者单位： | 中国科学院新疆理化技术研究所,中国科学院新疆理化技术研究所 |
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| 摘 要： | 本文通过对辐照及辐照后退火时不同剂量率条件下FPGA器件的静态功耗电流进行在线实时测量,探讨了静态功耗电流随累积剂量及退火时间的变化关系,分析了辐照后常温(25℃)及高温(80℃)退火时,器件静态功耗电流迅速减小的原因。同时,移位测量了不同剂量率条件下输出波形的峰峰值、延迟时间等功能参数,讨论了峰峰值、延迟时间随累积剂量的变化关系。
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| 关 键 词： | 静态随机存取存储器 总剂量效应 现场可编程门阵列 电离辐射效应 FPGA器件 延迟时间 低剂量率 SRAM |
| 收稿时间： | 8/29/2011 3:10:44 PM |
| 修稿时间： | 10/9/2011 4:28:28 PM |
Total dose ionizing irradiation effects on a static random access memory field programmable gate array |
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| Gao Bo,Yu Xuefeng,Ren Diyuan,Li Yudong,Sun Jing,Cui Jiangwei,Wang Yiyuan and Li Ming.Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J].Chinese Journal of Semiconductors,2012,33(3):034007-6. |
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| Authors: | Gao Bo Yu Xuefeng Ren Diyuan Li Yudong Sun Jing Cui Jiangwei Wang Yiyuan and Li Ming |
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| Affiliation: | Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China |
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| Abstract: | |
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| Keywords: | SRAM-based FPGA γ-~（60）Co ionizing irradiation effects evaluation methods |
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