Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach |
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Authors: | P. Vimala and N. B. Balamurugan |
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Affiliation: | Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai-625015, Tamilnadu, India;Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai-625015, Tamilnadu, India |
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Abstract: | A physics-based analytical model for symmetrically biased double-gate (DG) MOSFETs considering quantum mechanical effects is proposed. Schrödinger's and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum mechanical effects (QME) that influence the performance of DG MOSFETs. The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms. We systematically evaluated and analyzed the potentials and inversion charges, taking QME into consideration, in Si based double gate devices. The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined. The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases. |
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Keywords: | quantum mechanical effects DG MOSFETs centroid electric potential inversion-layer charge |
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