| 氮化硅的反应离子刻蚀研究 |
| |
| 引用本文： | 苟君,吴志明,太惠玲,袁凯.氮化硅的反应离子刻蚀研究[J].电子器件,2009,32(5):864-866,870. |
| |
| 作者姓名： | 苟君 吴志明 太惠玲 袁凯 |
| |
| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 |
| |
| 摘 要： | 采用CHF3、CHF3＋CF4和CHF3＋O2三种不同气体体系作氮化硅的反应离子刻蚀（RIE）实验,研究了不同刻蚀气体对刻蚀速率、均匀性和对光刻胶的选择比三个刻蚀参数的影响。通过优化气体配比,比较刻蚀结果,最终获得了刻蚀速率为119nm/min,均匀性为0.6%,对光刻胶选择比为3.62的刻蚀氮化硅的优化工艺。
|
| 关 键 词： | 反应离子刻蚀 氮化硅 刻蚀气体 优化 |
Study on the the Reactive Ion Etching of Si3N4 |
| |
| GOU Jun,WU Zhiming,TAI Huiling,YUAN Kai.Study on the the Reactive Ion Etching of Si3N4[J].Journal of Electron Devices,2009,32(5):864-866,870. |
| |
| Authors: | GOU Jun WU Zhiming TAI Huiling YUAN Kai |
| |
| Affiliation: | GOU Jun,WU Zhiming,TAI Huiling,YUAN Kai(University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu 610054,China) |
| |
| Abstract: | Reactive ion etching(RIE)of silicon nitride was performed with CHF3,CHF3+CF4,and CHF3+O2as etching gases.The relationship between different etching gases and the three parameters of etching rate,uniformity and selectivity was researched.By comparing the different etching results and optimizing the ratio of different gases,the optimized etching process were obtained with the etching rate as 119 nm/min,the uniformity as 0.6% and the PR selectivity as 3.62. |
| |
| Keywords: | RIE silicon nitride etching gas optimization |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子器件》浏览原始摘要信息 |
|
点击此处可从《电子器件》下载全文 |
|
