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Wetting behaviour of Y2O3/AlN additive on SiC ceramics
Authors:RM Balestra  S Ribeiro  SP Taguchi  FV Motta  C Bormio-Nunes
Affiliation:

aDepartment of Materials Engineering (DEMAR), Faculty of Chemical Engineering of Lorena (FAENQUIL), Polo Urbo Industrial, Gleba AI6, CP 116, 12600-970 Lorena, SP, Brazil

Abstract:The wetting of SiC plate by Y2O3/AlN additive was analysed using the sessile drop method. The wetting behaviour was observed by image capture system using a CCD camera during the heating, in argon atmosphere. The contact angle was measured as a function of temperature and time. After the wetting test the SiC plus additive samples were cut in order to observe the thickness plate cross section. The additive area and the interface between SiC and additive were analysed using scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The wetting of SiC by Y2O3/AlN is influenced by the presence of a solid phase in some of the additive drops that depends mainly on the additive composition and consequently on the temperature. The measured contact angles were below 7°, reaching 0° for Y2O3/AlN additive tested at the eutectic composition, indicating a very good wettability of Y2O3/AlN on the SiC.
Keywords:Wettability  Interfaces  SiC  Y2O3  AlN
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