增益开关半导体激光器的三级脉冲整形方案

增益开关半导体激光器产生的光脉冲宽度往往较宽,且具有一定大小的脉冲基座。为了提高增益开关半导体激光器的脉冲质量,提出了一种三级脉冲整形方案。首先,利用色散补偿光纤将增益开关半导体激光器输出的光脉冲宽度从39.381 ps压缩到26.681 ps,随后利用掺铒光纤放大器和色散位移光纤的高阶孤子效应进一步将光脉冲的宽度压缩到20.916 ps,最后利用半导体光放大器的自相位调制效应区分开脉冲基座与脉冲中心的光谱,并利用光滤波器滤除脉冲基座对应的光谱部分,从而消减脉冲基座,并将脉冲宽度压缩到18.497 ps。实验结果表明,该三级脉冲整形方案可以有效地压缩脉冲宽度以及减小脉冲基座,从而提高增益开关半导体激光器输出光脉冲的质量。

Three-Stage Pulse-Shaping Scheme for Gain-Switched Semiconductor Lasers

Gain-switched semiconductor lasers tend to produce optical pulses that are wide in width and have a pulse base of a certain size. In order to obtain pulse quality of gain-switched semiconductor lasers, a three-stage pulse shaping scheme was proposed. First, the optical pulse width at the output of the gain-switched semiconductor laser was compressed from 39.381 to 26.681ps using a dispersion-compensated fiber. Then, the width of the optical pulse was further compressed by using an erbium-doped fiber amplifier and the high-order soliton effect of a dispersion shifted fiber to 20.916ps. Finally, the self-phase modulation effect of the semiconductor optical amplifier was used to distinguish the spectrum of the pulse pedestal from the pulse center, and the optical filter was used to filter out the part of the spectrum corresponding to the pulse pedestal, thus eliminating the pulse pedestal and compressing the pulse width to 18.497ps. The experimental results show that this three-stage pulse shaping scheme can effectively compress the pulse width and reduce the pulse pedestal, thus improving the quality of the output optical pulse of the gain-switched semiconductor laser.