Hg1?x?y?zCdxMnyZnzTe: A new alternative to Hg1?xCdxTe |
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| Authors: | I. N. Gorbatyuk A. V. Markov S. é. Ostapov I. M. Rarenko |
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| Affiliation: | (1) Fed’kovich National University, Chernivtsy, 58012, Ukraine |
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| Abstract: | The results of studying the most important energy-band parameters of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the parameters of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14 μm. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1414–1418. Original Russian Text Copyright ? 2004 by Gorbatyuk, Markov, Ostapov, Rarenko. |
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