Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation |
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| Authors: | Muhammad Boota Matthijn Dekkers Minh D Nguyen Kurt H Vergeer Giulia Lanzara |
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| Affiliation: | 1. Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, the Netherlands;2. Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome, Italy;3. SolMates BV, Drienerlolaan 5, Building 6, 7522NB Enschede, the Netherlands;4. SolMates BV, Drienerlolaan 5, Building 6, 7522NB Enschede, the Netherlands;5. Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome, Italy |
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| Abstract: | Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The orientation of the SrRuO3 bottom electrode, either (110) or (001), was controlled by the deposition conditions and the subsequent PMN-PT layer followed the orientation of the bottom electrode. The ferroelectric, dielectric and piezoelectric properties of the (SrRuO3/PMN-PT/SrRuO3) ferroelectric capacitors exhibit orientation dependence. The properties of the films are explained in terms of a model based on polarization rotation. At low applied fields domain switching dominates the polarization change. The model indicates that polarization rotation is easier in the (110) film, which is ascribed to a smaller effect of the clamping on the shearing of the pseudo-cubic unit cell compared to the (001) case. |
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| Keywords: | PMN-PT pulsed laser deposition orientation control ferroelectricity piezoelectricity thin film epitaxy |
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