InGaAs光纤探测器封装及耦合效率影响因素研究

设计了InGaAs探测器芯片与多模石英光纤的耦合结构，测试了芯片耦合前后的性能变化，并分析了影响耦合效率的因素。结果表明，石英光纤与InGaAs探测器芯片可以较好地耦合。在0．9-1．7um波段，当采用与芯片尺径相当的100um光纤进行无透镜直接耦合时，耦合效率可达30％以上；当采用芯径为500岫的光纤耦合时，耦合效率可达55％以上。多模石英光纤出射端的光强呈高斯分布。随着光纤端面与芯片表面的间距偏差的增加，高斯分布曲线的半宽值增大，光束逐渐发散。芯片与光纤的对准偏差对耦合效率的影响很大，其中对横向偏移量的依赖性最强。

Study of Coupling Factor and Package Structure of InGaAs Optical Detector

A multi-mode silica fiber coupled InGaAs detector was designed. The performance of the chip was measured before and after its coupling. The factors which had influences on its coupling efficiency were analyzed. The result showed that the silica was suitable to be coupled with the InGaAs chip. In the waveband from 0.9 m to 1.7 m, the maximum coupling efficiency could be greater than 30 % when an optical fiber with a diameter of 100 m was used. When an optical fiber with a diameter of 500 m was used, the maximum coupling efficiency could be greater than 55 %. The light intensity exhibited Gaussian distribution at the exit end of the multi-mode silica optical fiber. With the increase of the distance between the end face of the fiber and the chip surface, the half-width value of the Gaussian distribution curve was increased and the light beam gradually diverged. The transverse offset and longitudinal discrepancy between the chip and the fiber end had a great influence on the coupling efficiency, and the transverse offset was a more significant influence factor.