Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs |
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Authors: | P. Yeo R. Arès S. P. Watkins G. A. Horley P. O’Brien A. C. Jones |
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Affiliation: | (1) Department of Physics, Simon Fraser University, V5A 1S6 Burnaby, BC, Canada;(2) Department of Chemistry and IRC for Semiconducting Materials, Imperial College, London, UK;(3) Epichem Limited, L35 7JW Wirral, Merseyside, UK |
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Abstract: | We report the use of a new precursor, trisneopentylgallium (NPG) for the growth of GaAs by atomic layer epitaxy (ALE). In contrast to most other alkyl gallium precursors such as triethylgallium, which decompose via a β-hydride elimination mechanism, this compound undergoes homolysis similar to that of trimethylgallium (TMGa), the normal choice as an ALE precursor. Clear self-limiting growth behavior similar to that of TMGa was observed over a reasonably wide range of growth conditions (430–500°C). Carbon incorporation was not significantly reduced compared with TMGa suggesting that the adsorbed neopentyl radicals undergo decomposition to result in a methyl terminated surface identical to that obtained for growth with TMGa. |
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Keywords: | Atomic layer epitaxy (ALE) gallium arsenide trineopentylgallium |
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