| 热退火对GaAs半导体晶片均匀性的影响 |
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| 引用本文： | 孙良泉,史常忻.热退火对GaAs半导体晶片均匀性的影响[J].固体电子学研究与进展,1992,12(2):147-151. |
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| 作者姓名： | 孙良泉 史常忻 |
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| 作者单位： | 上海交通大学材料科学系 200030
(孙良泉，金能韫)，上海交通大学微电子技术研究所 200030(史常忻) |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 主要讨论热退火(850℃退火2小时)对GaAs半导体晶片的位错密度和电阻率的影响,阐述了位错密度的分布与电阻率分布之间的关系。通过特殊的实验方法得到的结果证明:适当的退火处理将改善GaAs晶片中缺陷密度、电阻率的大小及分布,从而得到均匀性较好的GaAs材料。
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| 关 键 词： | 砷化镓 退火 位错 电阻率 |
The Effects of Thermal Annealing on the Inhomogeneity Across GaAs Wafers |
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| Sun Liangquan.Jin Nengyun.The Effects of Thermal Annealing on the Inhomogeneity Across GaAs Wafers[J].Research & Progress of Solid State Electronics,1992,12(2):147-151. |
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| Authors: | Sun LiangquanJin Nengyun |
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| Abstract: | Investigations are presented on the effects of thermal annealing on the inhomogeneity of the dislocation density and the sheet resistance across GaAs wafers. The relationship between the distributions of dislocation density and the sheet resistance has been shown and is interpreted. Results from specially designed experiments reveal that appropriate annealing leads to an improvement on the dislocation density and the sheet resistance configurations and hence, a better homogeneity of the material. |
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| Keywords: | GaAs Anneal Dislocation Resistivity |
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