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Aluminum doped ZnO by reactive sputtering of coaxial Zn and Al metallic targets |
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| Authors: | M A Santana-Aranda A Armenta-Estrada C Mendoza-Barrera C R Michel A Chávez-Chávez S Jiménez-Sandoval M Meléndez-Lira |
| Affiliation: | (1) Departamento de Física, CUCEI – Universidad de Guadalajara, Blvd. M. García Barragán 1421, Guadalajara, Jal, 44430, Mexico;(2) Departamento de Ciencias Básicas, UAM-Azcapotzalco, Av. San Pablo 180, Mexico, DF, 02200, Mexico;(3) Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Av. Ruiz Cortines 455 , Boca del Río, Ver, 94294, Mexico;(4) Departamento de Materiales, Centro de Investigación y Estudios Avanzados – IPN, Apartado Postal 1-798, Querétaro, Qro, 76001, Mexico;(5) Departamento de Física, Centro de Investigación y Estudios Avanzados – IPN, P.O. Box 14-740, Mexico, DF, 07000, Mexico |
| Abstract: | Transparent films of aluminum doped zinc oxide were obtained by reactive sputtering employing metallic zinc and aluminum targets. The targets were coaxially superposed in a single magnetron, by using a center hollow aluminum plate. Two different hole radii in the aluminum target were employed trying to modify the aluminum content. Sputtering power was kept constant at 50 W and temperature was set to 300, 400 and 500 °C. Oxygen partial pressure was 20 and 40% in argon. Film transparencies up to 85% were obtained using this method. X-ray diffraction and Raman spectroscopy measurements were performed to monitor the crystalline structure of the films. Sample resistance was determined by current voltage measurements. |
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