Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 /spl mu/m

We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 /spl mu/m. Using broad area devices, an internal absorption of 9.8 cm/sup -1/ and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current with temperature, a T/sub 0/ of 44 K is obtained. Narrow ridge waveguide lasers show continuous-wave laser operation at temperatures up to 45 /spl deg/C, with room-temperature (RT) threshold current of 37 mA. At RT, the maximum optical output power per facet of an uncoated 800/spl times/7 /spl mu/m/sup 2/ ridge waveguide laser exceeds 8 mW.