An Individual Carbon Nanotube Transistor Tuned by High Pressure |
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| Authors: | Christophe Caillier Anthony Ayari Vincent Gouttenoire Jean‐Michel Benoit Vincent Jourdain Matthieu Picher Matthieu Paillet Sylvie Le Floch Stephen T Purcell Jean‐Louis Sauvajol Alfonso San Miguel |
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| Affiliation: | 1. Université de Lyon, Laboratoire PMCN, CNRS, UMR 5586, Université Lyon 1, Villeurbanne 69622 (France);2. Université Montpellier 2, CNRS UMR 5587, Laboratoire des Colloides Verres & Nanomat, Montpellier 34095 (France) |
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| Abstract: | A transistor based on an individual multiwalled carbon nanotube is studied under high‐pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold–nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device. |
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| Keywords: | carbon nanotubes cross‐section pressure Schottky barriers transistors |
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