Organic Electronics: High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′‐Ditridecyl Perylene Diimide Based Field‐Effect Transistors: Improving Performance and Stability with Thermal Treatment (Adv. Funct. Mater. 16/2010) |
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Authors: | Jaeyoung Jang Sooji Nam Dae Sung Chung Se Hyun Kim Won Min Yun Chan Eon Park |
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Affiliation: | Department of Chemical Engineering, POSTECH Polymer Research Institute, Pohang University of Science and Technology, Pohang, 790–784 (Rep. Korea) |
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Abstract: | A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N,N′‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm2 V?1 s?1 in the 20 V saturation regime and long‐term stability with respect to H2O/O2 degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. |
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Keywords: | cyclic olefin copolymers air stability thermal annealing organic field‐effect transistors |
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