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Fabrication of n‐ and p‐Type Organic Thin Film Transistors with Minimized Gate Overlaps by Self‐Aligned Nanoimprinting
Authors:Ursula Palfinger  Christoph Auner  Herbert Gold  Anja Haase  Johanna Kraxner  Thomas Haber  Meltem Sezen  Werner Grogger  Gerhard Domann  Georg Jakopic  Joachim R. Krenn  Barbara Stadlober
Affiliation:1. Institute of Nanostructured Materials and Photonics, Joanneum Research GmbH, Franz‐Pichlerstrasse 30, A‐8160 Weiz (Austria), Fax: 0043‐316‐876‐2710, Telephone: 0043‐316‐876‐2721;2. Institute for Electron Microscopy, Graz University of Technology, Steyrergasse 17, A‐8010 Graz (Austria);3. Fraunhofer‐Institut für Silicatforschung ISC, Neunerplatz 2, D‐97082 Würzburg (Germany)
Abstract:
Keywords:self‐alignment  nanoimprinting  high frequency  parasitic capacitance
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