| 向32 nm迈进的光刻技术 |
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| 引用本文： | 童志义. 向32 nm迈进的光刻技术[J]. 电子工业专用设备, 2007, 36(4): 8-16 |
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| 作者姓名： | 童志义 |
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| 作者单位： | 中国电子科技集团公司第四十五研究所,北京东燕郊,101601 |
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| 摘 要： | 概述了用于45nm节点的各种光刻技术发展现状及技术路线,结合国际半导体技术发展指南(ITRS)和各公司最新宣布的研究成果,探讨了各种光刻技术用于32nm节点的可能性。
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| 关 键 词： | 浸液式光刻 折射率 双重曝光 极紫外光刻 纳米压印光刻 曝光设备 |
| 文章编号： | 1004-4507（2007）04-0008-09 |
| 修稿时间： | 2007-03-28 |
Lithography Techniques for the Node of 32 nm |
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| TONG Zhi-yi. Lithography Techniques for the Node of 32 nm[J]. Equipment for Electronic Products Marufacturing, 2007, 36(4): 8-16 |
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| Authors: | TONG Zhi-yi |
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| Affiliation: | The 45th Research Institute of CETC, Beijing East Yanjiao Development Zone 065201, China |
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| Abstract: | The current status and lithography roadmap of ITRS 2006 is reviewed in this paper, The trends of lithography Techniques for the node of 32nm has been approached with the roadmap of ITRS and the newest results of research announced in SPIE 2006 Optical Microlithography symposium and IEDM 2007. |
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| Keywords: | Immersion lithography Re,active Index EUVL Polarization Technology Dual Exposure Imprint Exposure Tool |
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