High power AlGaAs-GaAs visible diode lasers |
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| Authors: | Tihanyi P.L. Jain F.C. Robinson M.J. Dixon J.E. Williams J.E. Meehan K. O'Neill M.S. Heath L.S. Beyea D.M. |
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| Affiliation: | Dept. of Electr. Eng., Connecticut Univ., Storrs, CT; |
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| Abstract: | A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime (≃715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 μm in width with a centerline separation of 9 μm. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10°C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in |
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