| 磁控溅射功率对引线支架表面沉积 W 组织及性能的影响 |
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| 引用本文： | 张光耀,高原,张焱,王成磊,韦文竹,陆小会. 磁控溅射功率对引线支架表面沉积 W 组织及性能的影响[J]. 表面技术, 2014, 43(6): 33-36,63 |
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| 作者姓名： | 张光耀 高原 张焱 王成磊 韦文竹 陆小会 |
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| 作者单位： | 桂林电子科技大学 材料科学与工程学院,广西 桂林,541004 |
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| 基金项目： | 国家自然科学基金项目，广西科学研究与技术开发科技攻关计划项目，广西信息材料重点实验室项目(1210908-214-Z)Fund:Supported by the National Science Foundation of China，Guangxi Science and Technology Development of Science and Tech-nology Research Project，Guangxi Key Laboratory of Information Materials Project |
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| 摘 要： | 目的研究在镀铜的铁基引线支架上沉积钨薄膜的工艺及其性能。方法利用真空磁控溅射技术沉积制备钨薄膜层,并用SEM,EDS,XRD等技术对沉积层的组织和性能进行分析。结果在一定的工作气压、温度和沉积时间下,钨沉积层厚度随着溅射功率的增大非线性增加,沉积层均匀性好,组织较致密,与基体结合力较强,沉积层钨原子沿(110)晶面择优生长。沉积层的电阻率小于1.5×10-6Ω·m,电阻温度系数小于0.0052/℃,抗氧化性较好。结论在引线支架表面沉积金属钨可获得组织均匀致密的薄膜,其结合力、导电性、抗氧化性能良好。
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| 关 键 词： | 磁控溅射 薄膜 钨 导电性 结合力 |
| 收稿时间： | 2014-07-08 |
| 修稿时间： | 2014-12-10 |
Effect of Magnetron Sputtering Power on the Structure and Properties of Deposition W on the Surface of Lead Frames |
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| ZHANG Guang-yao,GAO Yuan,ZHANG Yan,WANG Cheng-lei,WEI Wen-zhu and LU Xiao-hui. Effect of Magnetron Sputtering Power on the Structure and Properties of Deposition W on the Surface of Lead Frames[J]. Surface Technology, 2014, 43(6): 33-36,63 |
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| Authors: | ZHANG Guang-yao GAO Yuan ZHANG Yan WANG Cheng-lei WEI Wen-zhu LU Xiao-hui |
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| Affiliation: | School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China,School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China,School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China,School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China,School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China and School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China |
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| Abstract: | |
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| Keywords: | magnetron sputtering film tungsten conductivity binding force |
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