Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode |
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| Authors: | Rao Feng Song Zhitang Gong Yuefeng Wu Liangcai Feng Songlin Chen Bomy |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China. |
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| Abstract: | A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline tungsten trioxide heating layer promotes the temperature rise in the Ge(2)Sb(2)Te(5) layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. Theoretical thermal simulation and calculation for the reset process are applied to understand the thermal effect of the tungsten trioxide heating layer/electrode. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline tungsten trioxide material. |
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