Precursor evaluation for in situ InP nanowire doping |
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Authors: | Borgström M T Norberg E Wickert P Nilsson H A Trägårdh J Dick K A Statkute G Ramvall P Deppert K Samuelson L |
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Affiliation: | Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden. |
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Abstract: | The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n-?and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n-?or p-type. These doped nanowires can be characterized based on their electric field response and we find that n-type doping scales over a range from 10(17) to 10(19)?cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes. |
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