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基于同步信号的多路延时IGBT驱动电路设计
引用本文:石经纬,巩春志,张可心,田修波,杨士勤.基于同步信号的多路延时IGBT驱动电路设计[J].电力自动化设备,2012,32(1):123-126.
作者姓名:石经纬  巩春志  张可心  田修波  杨士勤
作者单位:哈尔滨工业大学现代焊接生产技术国家重点实验室,黑龙江哈尔滨,150001
基金项目:国家自然科学基金资助项目(50773015,10975041)
摘    要:基于同步信号设计了一种可实现相互之间高压隔离的IGBT多路延时驱动电路系统,并应用到Marx电路中,实现了可柔性调节的阶梯型脉冲高压输出。试验结果表明,延时驱动电路可实现最大30μs的延时,且具有IGBT驱动电压欠压保护、自给反向栅压等功能,同时场效应管的存在抑制了栅射极电压振荡。驱动信号高压隔离变压器为单原边多副边结构,简单紧凑,通过副边数目的增减,可驱动不同级数的Marx电路,具有扩展性好的优点。过流保护电路反应速度快,IGBT关断可靠,可在2μs之内抑制短路电流继续上升。该驱动电路应用于10级的Marx电路中,实现了峰值电压10 kV,脉冲宽度30μs,最大电压阶数10阶的脉冲高压输出。

关 键 词:延时  驱动电路  Marx电路  阶梯型脉冲  欠压保护  IGBT  场效应管

Design of multi-channel time-delayed IGBT driving circuit based on synchronous signals
SHI Jingwei,GONG Chunzhi,ZHANG Kexin,TIAN Xiubo and YANG Shiqin.Design of multi-channel time-delayed IGBT driving circuit based on synchronous signals[J].Electric Power Automation Equipment,2012,32(1):123-126.
Authors:SHI Jingwei  GONG Chunzhi  ZHANG Kexin  TIAN Xiubo and YANG Shiqin
Affiliation:(State Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology,Harbin 150001,China)
Abstract:A multi-channel time-delayed IGBT(Insulated Gate Bipolar Transistor) driving circuit system is designed based on synchronous signals,which is applied to Marx circuit for outputting soft-adjustable discrete-step high-voltage pulse.The high-voltage channels are isolated from each other.Experimental results show that,the driving circuit has the maximum time delay of 30 μs.It has under-voltage protection,and provides minus-voltage pulses to gate and applies MOSFET to inhibit the gate-emitter voltage oscillation.The high-voltage isolation transformer of driving signal has a compact structure of single primary winding and multiple secondary windings to drive multi-stage Marx circuit with good expandability.Its over-current protection has fast response,which turns IGBT off reliably to suppress the short-circuit current within 2 μs.It is applied in the ten-stage Marx circuit to output 10 kV-30 μs pulse with up to ten steps.
Keywords:time delay  driving circuit  Marx circuit  discrete-step pulse  under-voltage protection  insulated gate bipolar transistors  MOSFETs
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