Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes |
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| Affiliation: | 1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;2. Physics Division, Institute of Nuclear Energy Research (INER), Longtan District, Taoyuan City 32546, Taiwan;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People''s Republic of China;2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People''s Republic of China;4. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, People''s Republic of China;5. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People''s Republic of China;6. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;1. Escuela de Física, Universidad Industrial de Santander, A. A. 678, Bucaramanga, Colombia;2. La Universidad Rusa de la Amistad de los Pueblos, Miklujo-Maklaya, Nº 6, Moscow, Russia |
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| Abstract: | In this letter, lateral GaN-based Light Emitting Diodes (LEDs) with a SiO2 current blocking layer (CBL) buried in the indium tin oxide (ITO) film and highly reflective metal materials have been proposed. Compared with the conventional CBL structure which was inserted between ITO film and p-type GaN, simulation results showed that LEDs with a buried CBL in the ITO film effectively facilitated current spreading under the CBL. We demonstrated that buried CBL was beneficial for suppressing current crowding (CC) effect around the edge of CBL and may facilitate higher LED efficiency. Furthermore, experimental results showed that LEDs with the buried structure we proposed showed lower working voltage and higher light output power (LOP) compared with those with conventional CBL structure. These results further confirmed that the buried CBL scheme was effective to reduce current crowding (CC) effect. In addition, highly reflective metal materials of Cr/Al/Pt/Au were employed to reduce light absorption and achieve high light extraction efficiency. |
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| Keywords: | Current crowding effect Buried current blocking layer Reflective electrodes Lateral light emitting diodes |
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