Effect of processing parameter on structural,optical and electrical properties of photovoltaic chalcogenide nanostructured RF magnetron sputtered thin absorbing films |
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| Affiliation: | 1. University Department of Physics, Ranchi University, Ranchi 834008, India;2. Institute Instrumentation Centre, Indian Institute of Technology, Roorkee 247667, India;1. College of Physics, Optoelectronics and Energy, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou 215006, PR China;2. Chemistry Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia;1. Unité de recherche sur les Hétéro-Epitaxies et Applications (URHEA), 5000 Monastir, Tunisia;2. Département de Physique, Faculté des Sciences et Techniques, Université Abdou Moumouni, BP 10662, Niamey Niger;3. Université de Monastir, Faculté des Sciences de Monastir, Tunisia;1. Institute of General and Inorganic Chemistry, BAS, Acad. G. Bonchev St., bl. 11, 1113 Sofia, Bulgaria;2. Laboratory of Nanoparticle Science and Technology, Faculty of Chemistry and Pharmacy, University of Sofia, 1 James Bourchier Blvd., 1164 Sofia, Bulgaria;3. Institute of Electrochemistry and Energy Systems, BAS, Acad. G. Bonchev St., bl. 10, 1113 Sofia, Bulgaria;4. Institute of Catalysis, BAS, Acad. G. Bonchev St., bl. 11, 1113 Sofia, Bulgaria;1. Department of Gastroenterology, Laboratory of Medical Investigations LIM37 Discipline of Liver and Gastrointestinal Transplantation, Hospital das Clinicas, University of São Paulo, Brazil;2. Discipline of Anesthesiology, Hospital das Clinicas, University of São Paulo, Brazil;3. School of Medicine, Medical Student and Scientific Research in Medicine FAPESP, Hospital das Clinicas, University of São Paulo, Brazil |
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| Abstract: | The aim of this work was to develop high quality of CuIn1?xGaxSe2 thin absorbing films with x (Ga/In+Ga)<0.3 by sputtering without selenization process. CuIn0.8Ga0.2Se2 (CIGS) thin absorbing films were deposited on soda lime glass substrate by RF magnetron sputtering using single quaternary chalcogenide (CIGS) target. The effect of substrate temperature, sputtering power & working pressure on structural, morphological, optical and electrical properties of deposited films were studied. CIGS thin films were characterised by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Energy dispersive X-ray spectroscopy (EDAX), Atomic force microscopy (AFM), UV–vis–NIR spectroscopy and four probe methods. It was observed that microstructure, surface morphology, elemental composition, transmittance as well as conductivity of thin films were strongly dependent on deposition parameters. The optimum parameters for CIGS thin films were obtained at a power 100 W, pressure 5 mT and substrate temperature 500 °C. XRD revealed that thin film deposited at above said parameters was polycrystalline in nature with larger crystallite size (32 nm) and low dislocation density (0.97×1015 lines m?2). The deposited film also showed preferred orientation along (112) plane. The morphology of the film depicted by FE-SEM was compact and uniform without any micro cracks and pits. The deposited film exhibited good stoichiometry (Ga/In+Ga=0.19 and In/In+Ga=0.8) with desired Cu/In+Ga ratio (0.92), which is essential for high efficiency solar cells. Transmittance of deposited film was found to be very low (1.09%). The absorption coefficient of film was ~105 cm?1 for high energy photon. The band gap of CIGS thin film evaluated from transmission data was found to be 1.13 eV which is optimum for solar cell application. The electrical conductivity (7.87 Ω?1 cm?1) of deposited CIGS thin film at optimum parameters was also high enough for practical purpose. |
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| Keywords: | CIGS thin film Sputtering parameter XRD EDAX Band gap |
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