Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor |
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| Affiliation: | 1. Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara, Turkey;2. Department of Physics, Faculty of Arts & Sciences, Düzce University, 81620 Düzce, Turkey;1. University of Gent, vakgroep Vaste Stof Wetenschappen;2. Hungarian Academy of Sciences;2. Slovak Academy of Sciences;4. Sultan Qaboos University;5. Istanbul Medeniyet University, Turkey;1. Department of Physics, Faculty of Science, University of Yüzüncü Y?l, 65080 Van, Turkey;2. Department of Chemistry, Faculty of Science, University of Yüzüncü Y?l, 65080 Van, Turkey;3. Department of Chemistry, Faculty of Science and Arts, University of Gaziantep, 27310 Gaziantep, Turkey;1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;2. Science Education Department, Faculty of Education, Aksaray University, 68100 Aksaray, Turkey;3. Department of Computer Engineering, Technology Faculty, Düzce University, Düzce, Turkey;1. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, PL 00 662 Warszawa, Poland;2. Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland;1. Department of Physics, Ataturk University, 25240 Erzurum, Turkey;2. Ostim Vocational School, Gazi University, 06500 Ankara, Turkey;3. Department of Biology, Ataturk University, 25240 Erzurum, Turkey;4. Department of Physics, K.K. Education Faculty, Ataturk University, 25240 Erzurum, Turkey |
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| Abstract: | The dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor were studied. The MOS capacitor was irradiated by a 60Co gamma radiation source with a dose rate of 0.69 kGy/h. The dielectric parameters such as dielectric constant (ε′), dielectric loss (ε″), loss factor (tan δ) and ac electrical conductivity (σac) were calculated from the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. It is found that the C and G/ω values decrease with the increasing total dose due to the irradiation-induced defects at the interface. Also, the calculated values of ε′, ε″ and σac are found to decrease with an increased radiation dose. This result indicates that the dielectric characteristics of the MOS capacitor are sensitive to gamma-ray dose. |
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| Keywords: | MOS capacitor Radiation effect Dielectric Constant Dielectric loss Electrical conductivity |
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