Electrical characteristics of Pd Schottky contacts on ZnO films |
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| Affiliation: | 1. Departamento de Física, Universidade Federal do Paraná, 81531980 Curitiba, Paraná, Brazil;2. Departamento de Física, Universidade Federal de São Carlos, Rod. Washington Luis, Km 235, 13565-905 São Carlos, São Paulo, Brazil;1. Quantum-functional Semiconductor Research Center, Dongguk University - Seoul, Seoul 04623, South Korea;2. Department of Semiconductor Science, Dongguk University - Seoul, Seoul 04623, South Korea;1. College of Physics and Electronic Information, Inner Mongolia Normal University, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Hohhot, 010022, PR China;2. Department of Applied Physics, College of Electronic Engineering, South China Agricultural University, Guangzhou, 510642, PR China;3. School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, PR China;1. Department of Physics, Henan Normal University, Xinxiang, Henan 453007, China;2. International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou, Henan 450001, China |
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| Abstract: | The electrical characteristics of Pd Schottky contacts on ZnO films have been investigated by current-voltage (I–V) and capacitance–voltage (C–V) measurements at different temperatures. ZnO films of two thicknesses (400 nm and 1000 nm) were grown by DC-magnetron sputtering on n-Si substrates. The basic structural, optical and electrical properties of these films are also reported. We compared the two Schottky diodes by means of characteristic parameters, such as rectification ratio, ideality factor (η), barrier height (Φb) and series resistance and obtained better results for the 1000 nm-ZnO Schottky diodes. We also discussed the dependence of I‐V characteristics on temperature and the two distinct linear regions observed at low temperatures are attributed to the existence of two different inhomogeneous barrier heights. From I–V plots in a log-log scale we found that the dominant current-transport mechanism at large forward bias is space-charge limited current (SCLC) controlled by the presence of traps within the ZnO bandgap. The existence of such traps (deep states or interface states) is demonstrated by frequency-dependent capacitance and deep-level transient spectroscopy (DLTS) measurements. |
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| Keywords: | ZnO Pd Schottky diodes Electrical characterization Barrier height Current-transport mechanisms Deep-level traps |
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