Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions |
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| Affiliation: | 1. National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, CAS Key Laboratory of Soft Matter Chemistry, University of Science and Technology of China, Hefei 230029, China;2. College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia;3. School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan;1. Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 México, D. F., México;2. CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 sur y Avenida San Claudio, Edif. 137, 72570 Puebla, Pue., México;1. Department of Physics, University of Mohaghegh Ardebili, 56199-11367 Ardebil, Iran;2. Department of Physics, Tafresh University, 39518-79611 Tafresh, Iran;1. Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Strasse 18, 8700 Leoben, Austria;2. Business Unit Coating, PLANSEE SE, Metallwerk-Plansee-Strasse 71, 6600 Reutte, Austria;1. Department Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Austria, Franz-Josef-Straße 18, 8700, Leoben, Austria;2. KAI, Kompetenzzentrum Automobil- und Industrie-Elektronik GmbH, Europastraße 8, 9524, Villach, Austria |
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| Abstract: | Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In1−xGax)(Se1−ySy)2 based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 23 full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82 nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17 nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21 nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum value of 42 μΩ cm for Mo films deposited at 200 W DC power. |
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| Keywords: | Molybdenum films DC-magnetron sputtering Back contact X-ray diffraction Electrical resistivity |
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