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Solid-state solutions of copper indium disulfide and zinc indium tetrasulfide: Growth,crystallography and opto-electronic properties
Affiliation:1. Lesya Ukrainka Eastern European National University, Avenue Voli 13, Lutsk 43025, Ukraine;2. Semiconductor Physics Department and Institute of Applied Research of Vilnius University, Avenue Saulėtekio 9/3, LT-10222 Vilnius, Lithuania;1. Sree Narayana College, Kannur, Kerala, India;2. Pazhassi Raja N.S.S. College, Mattannur, Kerala, India;1. Graduate School & Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba-shi, Chiba 263-8522, Japan;2. College of Mechanical Engineering, Tianjin University of Science and Technology, No. 1038, Dagu Nanlu, Hexi District, Tianjin 300222, PR China;3. Chiba Industrial Technology Research Institute, 6-13-1, Tendai, Inage-ku, Chiba-shi, Chiba 263-0016, Japan;4. School of Civil Engineering, Southeast University, No. 2, Sipailou, Nanjing 210096, China;5. College of Materials Science & Engineering, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing 400044, China;1. Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;2. Physics Department, Faculty of Science, Ain Shams University, Abassia, 11556 Cairo, Egypt;3. Basic Sciences Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;1. Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt;2. Materials Science Laboratory, Physics Department, Girls College for Arts, Science, and Education, Ain Shams University, Cairo, Egypt;1. Department of Physics, Christian College, Angadikal P.O., Chengannur, Kerala 689122, India;2. UGC–DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017, India
Abstract:Copper indium disulfide–zinc indium tetrasulfide solid solutions with different contents of zinc indium tetrasulfide, ranging from 4 to 16 mol% were grown by the horizontal modification of the Bridgman–Stockbarger method. Their structural properties were investigated by the X-ray analysis. Spectral dependences of their photoconductivity were analyzed at T≈30 K. In the single crystals with 8–12 mol% of zinc indium tetrasulfide the induced photoconduction phenomenon was observed. It could be explained by the model of three recombination and trapping centers with different capture cross sections. Indium vacancies VIn or substitutional defects CuIn are possibly the fast recombination centers; meanwhile copper vacancies VCu act as the slow recombination centers. The presence of electrically active shallow defects was confirmed by the measurements of the temperature dependences of electrical conductivity and thermally stimulated currents of these samples with n-type conductivity.
Keywords:Semiconductors  Inorganic solid solutions  Crystal growth  Crystal structure  Photoelectrical properties  Defects
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